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| MKI 75-06 A7 IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA IC25 = 90 A = 600 V VCES VCE(sat) typ. = 2.1 V Preliminary Data B3 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 18 ; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 18 ; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 600 20 90 60 ICM = 120 VCEK VCES 10 280 V V A A A s W Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Advantages Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.1 2.5 4.5 0.9 200 50 50 270 40 3.5 2.5 3200 190 2.6 6.5 1.3 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.44 K/W space savings reduced protection circuits package designed for wave soldering VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 75 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1.5 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Typical Applications Inductive load, TVJ = 125C VCE = 300 V; IC = 75 A VGE = 15 V; RG = 18 motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 75 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 1-4 204 MKI 75-06 A7 Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 140 85 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 75 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 60 A; diF/dt = -500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 1.8 1.3 28 100 2.1 V V A ns 0.61 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.95 V; R0 = 20 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.014 V; R0 = 4 m Thermal Response B3 Conditions Maximum Ratings -40...+150 -40...+125 C C V~ Nm IGBT (typ.) Cth1 = 0.248 J/K; Rth1 = 0.343 K/W Cth2 = 1.849 J/K; Rth2 = 0.097 K/W Free Wheeling Diode (typ.) Cth1 = 0.23 J/K; Rth1 = 0.483 K/W Cth2 = 1.3 J/K; Rth2 = 0.127 K/W IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions 2500 2.7 - 3.3 Characteristic Values min. typ. max. 5 m mm mm 0.02 180 K/W g Creepage distance on surface Strike distance in air with heatsink compound 6 6 Dimensions in mm (1 mm = 0.0394") (c) 2002 IXYS All rights reserved 2-4 MKI 75-06 A7 200 A 160 VGE= 17V 15V 13V 200 A 160 120 11V VGE= 17V 15V 13V 11V IC IC 120 80 40 0 0 1 2 3 4 VCE 5 V 9V TVJ = 25C 80 40 0 9V TVJ = 125C 6 0 1 2 3 4 VCE 5V 6 B3 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 200 A 160 IC 160 A 120 IF 80 TVJ = 125C TVJ = 25C 120 80 TVJ = 125C TVJ = 25C 40 VCE = 20V 40 0 4 6 8 10 VGE 12 V 14 0 0.0 0.5 1.0 1.5 VF 2.0 V 2.5 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 60 50 A IRM trr 20 V 150 ns trr 15 VGE 40 30 20 TVJ = 125C VR = 300V IF = 60A MWI7506A7 100 10 50 5 VCE = 300V IC = 75A 10 IRM 0 0 40 80 120 160 QG 0 200 nC 240 0 200 400 0 600 800 A/s -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2002 IXYS All rights reserved 3-4 MKI 75-06 A7 10.0 mJ Eon 100 ns td(on) tr VCE = 300V VGE = 15V 5 mJ 500 Eoff ns 400 t 300 200 100 tf 0 40 80 120 A IC 0 160 7.5 75 t 50 4 Eoff 3 2 25 VCE = 300V VGE = 15V 5.0 td(off) 2.5 Eon RG = 18 TVJ = 125C 1 0 RG = 18 TVJ = 125C 0.0 0 0 40 80 IC 120 A 160 B3 Fig. 7 Typ. turn on energy and switching times versus collector current 10 mJ Eon 100 td(on) tr ns 80 t 60 VCE = 300V VGE = 15V IC = 75A TVJ = 125C Fig. 8 Typ. turn off energy and switching times versus collector current 5 mJ Eoff 500 td(off) Eoff ns 400 t 300 200 100 0 8 6 4 2 0 0 10 20 30 Eon 4 3 2 1 0 0 10 20 30 40 RG 40 20 0 VCE = 300V VGE = 15V IC = 75A TVJ = 125C tf 40 RG 50 60 50 60 Fig. 9 Typ. turn on energy and switching times versus gate resistor 160 A ICM 1 K/W 0.1 ZthJC 0.01 Fig.10 Typ. turn off energy and switching times versus gate resistor diode IGBT 120 80 40 RG = 18 TVJ = 125C 0.001 single pulse 0 0 100 200 300 400 500 600 VCE 700 V 0.0001 0.00001 0.0001 0.001 MWI7506A7 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2002 IXYS All rights reserved 4-4 |
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